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IPT1206-TEA -    High current density due to double mesa technology

IPT1206-TEA_8951986.PDF Datasheet


 Full text search :    High current density due to double mesa technology


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GE Industrial Systems
PP0640SA PP0640SB Thyristor, Thyristor, 58V Forward Blocking Voltage, 1A On-State Current, 150mA Holding Current, 1420A RMS Current
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Semikron International
MG360V1US41 E002277 Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Current, It av:12A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
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From old datasheet system
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DIODE, STUD 95A 1200VDIODE, STUD 95A 1200V; Voltage, Vrrm:1200V; Current, If av:95A; Current, Ifs max:1150A; Voltage, forward at If:1.5V; Case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Catho
THYRISTOR, CAPSULE 600ATHYRISTOR, CAPSULE 600A; Voltage, Vrrm:1200V; Current, It av:600A; Case style:TO-200; Current, It rms:1400A; Current, Itsm:11500A; Voltage, Vgt:2.0V; Current, Igt:200mA; Diameter, External:57.3mm; Length /
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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